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  • Infineon IKW50N65ES5XKSA1 IGBT Transistor, Through Hole
  • Infineon IKW50N65ES5XKSA1 IGBT Transistor, Through Hole
Infineon IKW50N65ES5XKSA1 IGBT Transistor, Through Hole

Infineon IKW50N65ES5XKSA1 IGBT Transistor, Through Hole

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BrandInfineon
Part NumberIKW50N65ES5XKSA1
Mounting TypeThrough Hole
Pin Count3
Transistor ConfigurationSingle
Channel TypeN
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Specifications of Infineon IKW50N65ES5XKSA1 IGBT Transistor, Through Hole

Product Details

Brand Infineon
Part Number IKW50N65ES5XKSA1
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Type N

Addittional Details

Dimensions 16.13 x 5.21 x 21.1 mm
Gate Capacitance 3100 pF
Maximum Collector Emitter Voltage 650 V
Maximum Continuous Collector Current 80 A
Maximum Gate Emitter Voltage ±20 V
Maximum Operating Temperature +175°C
Maximum Power Dissipation 274 W
Minimum Operating Temperature -40°C
Number of Transistors 1
Package Type TO-247
Switching Speed 30 kHz
Energy Rating 1.78 mJ
Product Photos
  • Infineon IKW50N65ES5XKSA1 IGBT Transistor, Through Hole
  • Infineon IKW50N65ES5XKSA1 IGBT Transistor, Through Hole
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