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ON Semiconductor 2SB1204T-TL-E Bipolar Transistor, Through Hole

ON Semiconductor 2SB1204T-TL-E Bipolar Transistor, Through Hole

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BrandON Semiconductor
Part Number2SB1204T-TL-E
Transistor TypePNP
Maximum Operating Frequency130 MHz
Maximum Operating Temperature+150°C
Maximum Power Dissipation20 W
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Specifications of ON Semiconductor 2SB1204T-TL-E Bipolar Transistor, Through Hole

Product Details

Brand ON Semiconductor
Part Number 2SB1204T-TL-E
Transistor Type PNP
Maximum Operating Frequency 130 MHz
Maximum Operating Temperature +150°C
Maximum Power Dissipation 20 W
Mounting Type Through Hole
Pin Count 3

Additional Details

Maximum Emitter Base Voltage -6 V
Minimum DC Current Gain 70
Package Type TP-FA
Transistor Configuration Single
Number of Elements per Chip 1
Dimensions 6.5 x 2.3 x 5.5 mm
Maximum Base Emitter Saturation Voltage -1.3 V
Maximum Collector Base Voltage -60 V
Maximum Collector Emitter Saturation Voltage -550 mV
Maximum Collector Emitter Voltage 50 V
Maximum DC Collector Current 8 A
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ON Semiconductor 2SB1204T-TL-E Bipolar Transistor, Through Hole
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