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ON Semiconductor FJA13009TU Bipolar Transistor, Through Hole

ON Semiconductor FJA13009TU Bipolar Transistor, Through Hole

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BrandON Semiconductor
Part NumberFJA13009TU
Transistor TypeNPN
Maximum Operating Temperature+150°C
Maximum Power Dissipation130 W
Mounting TypeThrough Hole
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Specifications of ON Semiconductor FJA13009TU Bipolar Transistor, Through Hole

Product Details

Brand ON Semiconductor
Part Number FJA13009TU
Transistor Type NPN
Maximum Operating Temperature +150°C
Maximum Power Dissipation 130 W
Mounting Type Through Hole
Pin Count 3

Additional Details

Maximum Emitter Base Voltage 9 V
Minimum DC Current Gain 6
Package Type TO-3P
Transistor Configuration Single
Number of Elements per Chip 1
Dimensions 15.8 x 5 x 20.1 mm
Maximum Base Emitter Saturation Voltage 1.6 V
Maximum Collector Base Voltage 700 V
Maximum Collector Emitter Saturation Voltage 3 V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 12 A
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ON Semiconductor FJA13009TU Bipolar Transistor, Through Hole
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