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ON Semiconductor FJE3303H1TU Bipolar Transistor, Through Hole

ON Semiconductor FJE3303H1TU Bipolar Transistor, Through Hole

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BrandON Semiconductor
Part NumberFJE3303H1TU
Transistor TypeNPN
Maximum Operating Frequency0.1 MHz
Maximum Operating Temperature+150°C
Maximum Power Dissipation20 W
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Specifications of ON Semiconductor FJE3303H1TU Bipolar Transistor, Through Hole

Product Details

Brand ON Semiconductor
Part Number FJE3303H1TU
Transistor Type NPN
Maximum Operating Frequency 0.1 MHz
Maximum Operating Temperature +150°C
Maximum Power Dissipation 20 W
Mounting Type Through Hole
Pin Count 3

Additional Details

Dimensions 8 x 3.25 x 11 mm
Maximum Base Emitter Saturation Voltage 1.2 V
Maximum Collector Base Voltage 700 V
Maximum Collector Emitter Saturation Voltage 3 V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 1.5 A
Maximum Emitter Base Voltage 9 V
Minimum DC Current Gain 8
Number of Elements per Chip 1
Package Type TO-126
Transistor Configuration Single
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ON Semiconductor FJE3303H1TU Bipolar Transistor, Through Hole
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