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  • ON Semiconductor FJP13009TU Bipolar Transistor, Through Hole
  • ON Semiconductor FJP13009TU Bipolar Transistor, Through Hole
ON Semiconductor FJP13009TU Bipolar Transistor, Through Hole

ON Semiconductor FJP13009TU Bipolar Transistor, Through Hole

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BrandON Semiconductor
Part NumberFJP13009TU
Transistor TypeNPN
Maximum Operating Frequency4 MHz
Maximum Operating Temperature+150°C
Maximum Power Dissipation100 W
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Specifications of ON Semiconductor FJP13009TU Bipolar Transistor, Through Hole

Product Details

Brand ON Semiconductor
Part Number FJP13009TU
Transistor Type NPN
Maximum Operating Frequency 4 MHz
Maximum Operating Temperature +150°C
Maximum Power Dissipation 100 W
Mounting Type Through Hole
Pin Count 3

Additional Details

Maximum Emitter Base Voltage 9 V
Minimum DC Current Gain 6
Package Type TO-220
Transistor Configuration Single
Number of Elements per Chip 1
Dimensions 10.67 x 4.83 x 16.51 mm
Maximum Base Emitter Saturation Voltage 1.6 V
Maximum Collector Base Voltage 700 V
Maximum Collector Emitter Saturation Voltage 3 V
Maximum Collector Emitter Voltage 400 V
Maximum DC Collector Current 12 A
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  • ON Semiconductor FJP13009TU Bipolar Transistor, Through Hole
  • ON Semiconductor FJP13009TU Bipolar Transistor, Through Hole
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