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  • ON Semiconductor MJF44H11G Bipolar Transistor, Through Hole
  • ON Semiconductor MJF44H11G Bipolar Transistor, Through Hole
ON Semiconductor MJF44H11G Bipolar Transistor, Through Hole

ON Semiconductor MJF44H11G Bipolar Transistor, Through Hole

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BrandON Semiconductor
Part NumberMJF44H11G
Transistor TypeNPN
Maximum Operating Frequency20 MHz
Maximum Operating Temperature+150°C
Maximum Power Dissipation36 W
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Specifications of ON Semiconductor MJF44H11G Bipolar Transistor, Through Hole

Product Details

Brand ON Semiconductor
Part Number MJF44H11G
Transistor Type NPN
Maximum Operating Frequency 20 MHz
Maximum Operating Temperature +150°C
Maximum Power Dissipation 36 W
Mounting Type Through Hole
Pin Count 3

Additional Details

Maximum Emitter Base Voltage 5 V
Minimum DC Current Gain 40
Minimum Operating Temperature -55°C
Package Type TO-220FP
Transistor Configuration Single
Number of Elements per Chip 1
Dimensions 10.63 x 4.9 x 16.12 mm
Maximum Base Emitter Saturation Voltage 1.5 V dc
Maximum Collector Base Voltage 10 V dc
Maximum Collector Emitter Saturation Voltage 1 V dc
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 10 A
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  • ON Semiconductor MJF44H11G Bipolar Transistor, Through Hole
  • ON Semiconductor MJF44H11G Bipolar Transistor, Through Hole
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